【摘 要】
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Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT
【机 构】
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StateKeyLaboratoryofFunctionalMaterialsforInformatics,GraduateSchooloftheChineseAcademyofSciences,Gr
【基金项目】
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The work was financially supported by the National High Technology Research and Development Program of China (No.2002AA305304), the CNRS/ASC 2005: Project 18152, Natural Science Foundation Project (05