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用 AsCl_3—Ga—H_2开管流动系统外延生长 GaAs 晶体获得了以下各种电性能:(i)当 AsCl_3温度从20℃变到0℃时,在掺 Cr 半绝缘衬底上所生长的外延层中载流子浓度从2.5×10~(14)厘米~(-3)变到2×10~(15)厘米~(-3)(ii)如果在外延沉积前降低 Ascl_3的温度,在外延层——(掺Sn 低阻)衬底交界面处能观察到高阻区,若在生长过程中降低 Ascl_3温度,反而会出现低阻区。在较高的 AsCl_3温度下生长时,外延层表面会出现棱锥,使用偏离(100)面5度切割的衬底可以消除这些棱锥。
The following electrical properties were obtained by epitaxial growth of GaAs crystals using an AsCl 3 -Ga-H 2 open tubular flow system: (i) the epitaxial layer grown on a Cr-doped semi-insulating substrate when the AsCl 3 temperature was changed from 20 ° C to 0 ° C The carrier concentration changes from 2.5 × 10-14 cm -3 to 2 × 10-15 cm -3. (Ii) If the temperature of Ascl 3 is decreased before the epitaxial deposition, - (Sn doped low resistance) substrate interface can be observed at high resistance zone, if the growth process to reduce Ascl_3 temperature, but will appear low resistance zone. When grown at higher AsCl 3 temperatures, pyramids appear on the surface of the epitaxial layer, and the use of a substrate cut at 5 degrees off the (100) plane eliminates these pyramids.