Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtoseco

• 作 者: 马刘红 韩伟华 王昊 吕奇峰 张望 杨香 杨富华
• 机 构: Engineering Research Center for Semiconductor Integration Technology,Institute of Semiconductors,Chi
• 出 处: Chinese Physics B
• 发表日期: 2016年06期
• 关键词: writing transistor swing drain attributed currents instability steps clearly hav

Silicon junctionless nanowire transistor(JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the transistor,i.e.,current drive,threshold voltage,subthreshold swing(SS),and electron mobility are evaluated.The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K.The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to50 K,which is attributed to the electron transport through one-dimensional(1D) subbands formed in the nanowire.Besides,the device exhibits a better low-field electron mobility of 290 cm~2·V~(-1)·s~(-1),implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties.This approach provides a potential application for nanoscale device patterning.

Silicon junctionless nanowire transistors (JNT) are fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. These performances of the transistor, ie, current drive, threshold voltage, subthreshold swing (SS), and electron mobility are evaluated. device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K. The drain currents increase by steps with the gate voltage are clearly observed from 10 K to 50 K, which is attributed to the electron transport through one -dimensional (1D) subbands formed in the nanowire.Besides, the device exhibits a better low-field electron mobility of 290 cm -2 · V -1 · s -1, implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties. This approach provides a potential application for nanoscale device patterning.