Realizing enhanced thermoelectric properties in Cu2S-alloyed SnSe based composites produced via solu

• 作 者: Yao Chen Jie Chen Bin Zhang Meiling Yang Xiaofang Liu Hengyang Wang Lei Yang Guoyu Wang Guang Han Xiaoyuan Zhou
• 机 构: College of Materials Science and Engineering,Chongqing University,Chongqing 400044,China;School of M
• 出 处: 材料科学技术（英文版）
• 发表日期: 2004年期
• 关键词: Thermoelectric Tin chalcogenides Solution synthesis Composites Transmission elec

SnSe emerges as one of the most promising Te-free thermoelectric materials due to its strong anharmonic-ity and multiple valence bands structure.Recently,compositing has been proven effective in optimizing thermoelectric performance of various metal chalcogenides.Herein,a series of SnSe-xCu2S(x=0,0.5％,1％,3％,5％)materials have been fabricated via solution synthesis,particle blending,and spark plasma sinter-ing in sequence.After incorporating Cu2S,the materials become SnSe based composites with Cu doping,S substitution and Cu2SnSe3 secondary phase.We elucidate that the power factor of polycrystalline SnSe can be tuned and enhanced at varied temperature ranges through adjusting the addition amount of Cu2S.Additionally,the composites achieve suppressed lattice thermal conductivity when compared to SnSe itself,as the introduced point defects and SnSe/Cu2SnSe3 interfaces intensify phonon scattering.Conse-quently,SnSe-0.5％Cu2S and SnSe-3％Cu2S achieve a peak zT of 0.70 at 830 K(intermediate temperature range)and a highly increased zT of 0.28 at 473 K(low temperature range),respectively,which are～130％and 200％of values reached by SnSe at the corresponding temperatures.The study demonstrates that our approach,which combines compositing with elemental doping and substitution,is effective in optimizing the thermoelectric performance of SnSe at varied temperature ranges.