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以同成分化学组分比(Li2O:48.6mol%,Nb2O5:51.4mol%)为原料,Nd2O3为掺杂剂,应用坩埚下降法技术,生长了Nd3+初始掺杂为0.2mol%的LiNbO3晶体。测定了晶体的差热曲线、红外吸收光谱、紫外-可见吸收光谱,并与用提拉法技术生长的晶体性质进行了比较。观测到了Nd3+的特征吸收峰。在800nm的半导体激光激发下研究了晶体在1.06μm附近的荧光曲线和荧光寿命,观测到了1067,1080,1085,1093,1106nm五个分裂的4F3/2→4I11/2能级跃迁发射峰。测定了最强荧光峰(1085nm)的荧光寿命为351μs。与用提拉法技术生长的晶体相比,其荧光寿命得到了大幅度的变长,约为3.5倍。在密封条件下用坩埚下降法技术生长的晶体,由于在生长过程中隔绝了空气和水汽,所以在获得的晶体中具有低的OH-离子浓度,获得了长的荧光寿命。
In the same composition of chemical components (Li2O: 48.6mol%, Nb2O5: 51.4mol%) as raw materials, Nd2O3 as a dopant, using the crucible down method technology, the initial growth of Nd3 + doped 0.2mol% of LiNbO3 crystals. The thermogravimetric analysis, infrared absorption spectrum and UV-Vis absorption spectra of the crystals were measured and compared with those of the crystal grown by the Czochralski method. The characteristic absorption peak of Nd3 + was observed. Fluorescence spectra and fluorescence lifetime of the crystal near 1.06μm were investigated under excitation of 800nm semiconductor laser. Five splitting 4F3 / 2 → 4I11 / 2 transitions at 1067,1080,1085,1093,1106nm were observed. The fluorescence lifetime of the strongest fluorescence peak (1085 nm) was determined to be 351 μs. Compared with the crystal grown by Czochralski method, its fluorescence lifetime has been significantly longer, about 3.5 times. Crystals grown by the crucible descent technique under sealing conditions have a low OH- ion concentration in the obtained crystals due to the isolation of air and moisture during the growth, resulting in a long fluorescence lifetime.