Lithography-independent and large scale fabrication of a metal electrode nanogap

• 作 者: 李艳 王晓峰 张加勇 王晓东 樊中朝 杨富华
• 机 构: Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chin
• 出 处: 半导体学报
• 发表日期: 2009年09期
• 关键词: fabrication evaporation lithography removing wafer etching fabricate conformal c

A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated.Polysilicon was first dry etched using photoresist(PR) as the etch mask patterned by photolithography.Then,by depositing conformal SiO2 on the polysilicon pattern,etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH,a sacrificial SiO2 spacer was obtained.Finally,after metal evaporation and lifting-off of the SiO2 spacer,an 82 nm metal-gap structure was achieved.The size of the nanogap is not determined by the photolithography,but by the thickness of the SiO2.The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.

A lithography-independent and wafer scale method to fabricate a metal nanogap structure is patterned. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography. Chen, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined. by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.