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The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The light-induced changes of the concentration and energy level of the traps were estimated. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm-Si:H than that for a-Si:H.
The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si: H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm- Si: H than that for a-Si: H.