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德州仪器(TI)近日推出新型60V N通道功率FemtoFET功率晶体管,电阻实现业内最低,比传统60V负载开关低90%,同时,使终端系统功耗得以降低。CSD18541F5内置于微型1.53mm×0.77mm硅基封装,其负载开关的封装体积比SOT-23中的减小80%。CSD18541F5金属氧化物半导体场效应晶体管(MOSFET)保持典型的
Texas Instruments recently introduced the new 60V N-channel power FemtoFET power transistor that offers the industry’s lowest resistance, 90% lower than conventional 60V load switches, while reducing end system power consumption. The CSD18541F5 is housed in a tiny 1.53mm × 0.77mm silicon-based package with a load switch with a 80% smaller package volume than the SOT-23. The CSD18541F5 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) remains typical