论文部分内容阅读
据日本电子材料杂志1988年第6期报道,日本富士通研究所为了谋求器件的高性能化,用InAlAs/InGaAs异质结已研制成谐振隧道双极晶体管(RBT)。 器件结构:在通常的双极晶体管的发射区、基区上设计谐振隧道势垒。在InP衬底上依次形成n~+InGaAs(300nm,收集区),n InGaAs(300nm),p~+ InGaAs(150nm,基区),在其上面制作谐振遂道势垒InAlAs/InGaAs/InAlAs(4.4nm/3.8nm/4.4nm),在势垒和基区层中间形成40nm的InGaAs层。在势垒的上部制作InGaAs(150nm),n~+ InGaAs(100nm),然后再制作发射区。载流子浓度:发射区层为Si:1×10~(18)cm~(-3),基区层为B:5×10~(18)cm~(-3),收集区层为Si:1×10~(17)cm~(-3)。
According to Japan’s electronic materials magazine No. 6, 1988 reported that Japan’s Fujitsu Institute to seek for high-performance devices, with InAlAs / InGaAs heterostructure has been developed into a resonant tunneling bipolar transistor (RBT). Device structure: in the usual bipolar transistor emitter region, the base design of resonant tunnel barrier. N + InGaAs (300 nm, collector region), n InGaAs (300 nm) and p ~ + InGaAs (150 nm base region) are sequentially formed on an InP substrate, and resonant tunneling barriers InAlAs / InGaAs / InAlAs 4.4 nm / 3.8 nm / 4.4 nm), a 40 nm InGaAs layer was formed between the barrier and the base layer. InGaAs (150 nm) and n ~ + InGaAs (100 nm) were formed on the top of the barrier, and then the emitter region was fabricated. The carrier concentration is 1 × 10 ~ (18) cm ~ (-3) for the emitter layer and 5 × 10 ~ (18) cm ~ (-3) for the base layer. The collector layer is Si : 1 × 10 ~ (17) cm ~ (-3).