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High-k材料是指介电常数k高于SiO2的材料。使用high-k材料做栅绝缘层,是减小MOS器件栅绝缘层直接隧道击穿(DirectTunneling,DT)电流的有效方法。文章在二维器件模拟软件PISCES-II中添加了模拟以high-k材料为栅绝缘层的MOS器件模型,并对SiO2和high-k材料的MOS晶体管器件特性进行了模拟比较,成功地验证了所加high-k材料MOS器件模型的正确性。改进后的PISCES-II程序,可以方便地对以各种high-k材料为栅绝缘层的器件性能进行模拟。
High-k material refers to the dielectric constant k higher than the material of SiO2. The use of high-k materials as the gate insulating layer is an effective way to reduce the direct tunneling (DT) current of the MOS gate insulation layer. In this paper, a MOS device model simulating a high-k material as a gate insulating layer has been added to the PISCES-II software for simulating a two-dimensional device. The MOS transistor device characteristics of SiO2 and high-k materials have been compared and simulated. Successfully verified The correctness of the added high-k material MOS device model. The improved PISCES-II program makes it easy to simulate device performance with various high-k materials as gate insulating layers.