论文部分内容阅读
从发射极条宽、发射极条长、基极条数、发射极与基极间距四个方面分析了横向尺寸变化对SiGe HBT高频噪声的影响。结果表明增加发射极条长、基极条数和减小发射极与基极间距可以较为有效地减小晶体管噪声,而减小发射极与基极间距对噪声的改善效果比较显著。发射极与基极间距从1μm减小到0.5μm,2GHz工作频率下最小噪声系数可减小9dB,在0.5GHz工作频率下最小噪声系数可降至1.5dB,2GHz工作频率下最小噪声系数为3dB。
The effect of lateral dimension change on high frequency SiGe HBT noise is analyzed from four aspects: emitter width, emitter length, base number, emitter and base spacing. The results show that increasing the emitter length, the number of base and reducing the emitter to base spacing can effectively reduce the transistor noise, while reducing the emitter to base spacing of the noise improvement is more significant. The emitter-base distance is reduced from 1μm to 0.5μm, the minimum noise figure can be reduced by 9dB at 2GHz operating frequency, the minimum noise figure can be reduced to 1.5dB at 0.5GHz operating frequency, and the minimum noise figure can be 3dB at 2GHz operating frequency .