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利用俄歇电子能谱分析技术对四种不同涂复材料的钼栅极在受阴极活性蒸发物污染过程中的表面成份及化学状态进行了测试分析,并结合栅极发射做了对比试验。实验结果表明:利用离子溅射钽的方法,使钼栅极上获得一层钽膜,这层钽膜与钼基底结合较牢固,在整个实验过程中既没发现涂复钽的剥落,也没发现钼基底的显露,而且在受阴极活性物质污染的过程中,栅极发射小而稳定。与气相沉积的碳膜、碳化钛膜及均匀锆膜相比,溅射钽膜是一种很有前途的降低栅放的涂敷材料。
The surface composition and chemical state of molybdenum grids of four different coating materials during the process of contamination by cathode active evaporation were tested and analyzed by Auger electron spectroscopy. Contrast tests were carried out with gate emission. The experimental results show that tantalum is sputtered by ion sputtering to obtain a tantalum film on the molybdenum grid. This tantalum film combines with the molybdenum substrate more firmly. No peeling of the coated tantalum was observed during the experiment. The discovery of the molybdenum substrate revealed that the gate emission was small and stable during the contamination with the cathode active material. Compared with vapor deposited carbon films, titanium carbide films and even zirconium films, sputtered tantalum films are a promising coating for reducing gate deposition.