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本文描述了三级和四级单片GaAs功率FET放大器的设计、制造和性能表征。每个放大器芯片的尺寸为1mm×4mm。概述了这些单片放大器的工艺。用一个四级放大器在接近9GHz的频率下,以27dB的增益获得了高达1W的输出功率。所采用的电路布局十分灵活,它允许外接键合引线用作为旁路电感器而使放大器在C波段或S波段工作。用一个改进的四级放大器,在3.5GHz下以28dB的增益得到2W的输出功率,其功率附加效率为36.6%。
This article describes the design, manufacture, and performance characterization of triple and quad monolithic GaAs power FET amplifiers. The size of each amplifier chip is 1 mm × 4 mm. Overview of these monolithic amplifier technology. With a four-stage amplifier at frequencies approaching 9 GHz, up to 1 W of output power is achieved with a gain of 27 dB. The circuit layout used is very flexible, which allows the external bonding wire as a bypass inductor and the amplifier in the C band or S band work. With an improved four-stage amplifier, 2W of output power is obtained with a gain of 28dB at 3.5GHz with an additional power efficiency of 36.6%.