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本文报导了用于RF和DC电路中用真正的集总元件实现的四级直接级联GaAs FET单片前置放大器芯片的成功进展。设计的芯片全部自偏置,而且芯片上包括了所有工作需要的、从单一漏电源供电的DC电路。设计基于平面结构的栅长标称为1μm叉指型的FET图形。器件制作采用选择离子注入工艺,制成的芯片面积是0.060×0.110in,厚0.015in。芯片给出大于20dB增益,带宽为2GHz,中心频率接近7GHz,已达到的噪声系数是6dB,输出功率在1dB增益压缩点上的典型值是+8dBm,三级互调截止点接近+20dBm。
This article reports the success of four-stage direct cascaded GaAs FET monolithic preamplifier chips used in RF and DC circuits with true lumped components. The design of the chip all self-biasing, and the chip includes all the work needs, from a single drain power supply DC circuit. Gate structures based on planar structures are nominally designated as 1μm interdigitated FET patterns. Device selection using selected ion implantation process, the chip area is 0.060 × 0.110in, 0.015in thick. The chip gives a gain of more than 20dB with a bandwidth of 2GHz and a center frequency close to 7GHz. The achieved noise figure is 6dB. The output power is typically + 8dBm at a 1dB gain compression point and the +3 dB intercept point is close to +20 dBm.