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采用液相外延(LPE)生长的中波Hg Cd Te薄膜,基于B离子注入n-on-p平面结技术,制备了LBIC测试结构和I-V测试芯片并进行了相应的测试和分析。LBIC测试结果表明,Hg Cd Te pn结实际结区尺寸扩展4~5?m,这主要与光刻、B离子注入以及注入后低温退火等器件工艺有关。二极管器件C-V和I-V特性研究表明,所制备的Hg Cd Te pn结不是突变结也不是线性缓变结。中波Hg Cd Te二极管器件最高动态阻抗大于30 G?,器件优值R0A高达1.21×105?cm2,表现出较好的器件性能。
Based on B-ion implantation n-on-p planar junction technology, the LBIC test structure and I-V test chip were prepared and tested and analyzed by using medium wavelength Hg Cd Te thin film grown by liquid phase epitaxy (LPE). The results of LBIC test show that the actual junction area of Hg Cd Te pn junction expands by 4 ~ 5 μm in size, which is mainly related to lithography, B ion implantation and low temperature annealing after implantation. Diode device C-V and I-V characteristics of the study showed that the prepared Hg Cd Te pn junction is not a mutant junction nor a linear slow junction. The maximum dynamic impedance of the Hg Cd Te diode device is greater than 30 G? And the device excellent value R0A is as high as 1.21 105? Cm2, showing good device performance.