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分子束外延(MBE)是六十年代末提出,自七十年代中期以来,随着微波器件、光电器件和光通讯的发展,特别是集成光路的提出而发展起来的一种新的晶体生长技术。近几年来,MBE技术在基础理论和应用方面的研究都得到稳步发展。由于MBE在微波和光电器件领域的成功应用,以及利用MBE研制成功量子阱激光器和在同一衬底上单片集成光电子器件的研究取得成功,其发展就突飞猛进了。现在MBE已引起各国重视,尤其是在美国、日本、英国和法国研究都很活跃。目前我国已有几家开展了MBE
Molecular beam epitaxy (MBE) was proposed in the late sixties since the mid-1970s and developed as a new crystal growth technology with the development of microwave devices, optoelectronic devices and optical communications, especially integrated optical paths. In recent years, the research of MBE technology in basic theory and application has been steadily developed. Due to the successful application of MBE in the field of microwave and optoelectronic devices, and the success of MBE in developing successful quantum well lasers and monolithically integrating optoelectronic devices on the same substrate, the development of MBE has progressed by leaps and bounds. Now MBE has drawn the attention of all countries, especially in the United States, Japan, Britain and France are very active research. At present, there are already several MBEs in our country