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本文建立了发光二极管(LED)芯片的非等温多物理场耦合模型。结果表明,芯片内热源集中在多量子阱(MQWs)区域,且靠近p-GaN的第一个量子阱(QW)内的内热源强度最高;焦耳热和非辐射复合热贡献大,而汤姆逊热和帕尔帖热贡献小,可忽略。等温模型与非等温模型的对比表明,在大电流或低冷却能力条件下,芯片内部与芯片衬底温差显著,等温模型无法准确预测芯片性能,需采用非等温模型。
In this paper, a non-isothermal multi-physics coupled model of light-emitting diode (LED) chip is established. The results show that the heat source in the chip is concentrated in the MQWs and the internal heat source in the QW near the p-GaN has the highest intensity. The Joule heat and the non-radiative recombination heat contribute greatly, while the Thomson The contribution of heat and Peltier heat is small and negligible. The comparison between isothermal and non-isothermal models shows that the temperature difference between the chip and the chip substrate is significant under the conditions of high current or low cooling capacity. The isothermal model can not accurately predict the chip performance, and the non-isothermal model is required.