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采用常规ＰＥＣＶＤ工艺，在Ｎ型单晶硅（ｃ－Ｓｉ）衬底上沉积薄层纳米Ｓｉ（ｎｃ－Ｓｉ）膜，并进而制备了ｎｃ－Ｓｉ∶Ｈ／ｃ－Ｓｉ量子点二极管．在１０～１００Ｋ温度范围内实验研究了该结构的σ－Ｖ和Ｉ－Ｖ特性．结果指出，当反向偏压为－７～－９Ｖ时，无论在σ－Ｖ还是在Ｉ－Ｖ特性曲线上都观测到了近乎等间距的量子化台阶，此起因于在ｎｃ－Ｓｉ∶Ｈ膜中具有无序排布且粒径大小不一的Ｓｉ微晶粒中，由于微晶粒中能级的量子化而导致的共振隧穿现象．如果进一步改进膜层生长工艺，以制备出具有趋于有序排布、尺寸均匀和粒径更小的Ｓｉ微晶粒的ｎｃ－Ｓｉ∶Ｈ膜，有可能实现更高温度范围内的共振隧穿．
A conventional PECVD process was used to deposit a thin layer of nano-Si (nc-Si) film on an n-type monocrystalline silicon (c-Si) substrate and then a nc-Si: H / c-Si quantum dot diode was fabricated. The σ-V and I-V characteristics of the structure were experimentally investigated in the temperature range of 10 ~ 100K. The results show that when the reverse bias voltage is -7 ~ -9V, both the σ-V and the I-V characteristic curves are observed nearly equidistant quantization steps, which results from the nc-Si: H film In the Si microcrystals having disordered arrangement and different particle sizes, the resonant tunneling phenomenon due to the quantization of energy levels in the microcrystals. If the film growth process is further improved to produce nc-Si: H films with Si crystallites that tend to be ordered, uniform in size and smaller in size, it is possible to achieve resonant tunneling in the higher temperature range wear.