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DX33型硅微波功率静电感应晶体管是一种1GHz下输出功率≥10W、增益5～19dB的微波功率器件。具有非饱和型的三极管特性如图1所示。器件在1GHz下其线性输出功率可达9W、线性增益可达8～12dB,最大输出功率12W。在0.8GHz下最大输出功率可达13～15W,功率增益5～11dB。器件漏极效率≥30％。 DX33型是由电子工业部第十三研究所在1982年新研制的产品,并于1982年12月通过了
DX33 silicon microwave power electrostatic induction transistor is a 1GHz output power ≥ 10W, gain 5 ~ 19dB microwave power devices. Transistor with non-saturation characteristics shown in Figure 1. Its linear output power up to 9W at 1GHz, the linear gain up to 8 ~ 12dB, the maximum output power of 12W. At 0.8GHz maximum output power of up to 13 ~ 15W, the power gain of 5 ~ 11dB. Device drain efficiency ≥30%. The DX33 is a product newly developed by the Thirteenth Institute of the Ministry of Electronics Industry in 1982 and adopted in December 1982