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An impact ionization MOSFET(IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope(SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET(DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG(dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better ION, ION/IOFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I_(ON)/I_(OFF) ratio of 2.87 × 10~9 A/μm with ION as 11.87 × 10~(-4) A/μm and transconductance of 1.06 × 10~(-3) S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.
An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV / decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate IMPEDANCEIZATIONIZATION MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better ION, ION / IOFF ratio, and RF parameters. by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I_ (ON) / I_ (OFF) ratio of 2.87 × 10 ~ 9 A / μm with ION as 11.87 × 10 ~ (-4) A / μm and transconductance of 1.06 × 10 -3 S / μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.