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采用基区及发射区自对准和空气桥技术,降低了SiGe异质结晶体管器件的基极电阻及集电极和基极之间的结电容,提高了SiGe异质结晶体管器件的最高振荡频率fmax.以分子束外延SiGe材料为基础,研制出了SiGe异质结晶体管器件,取得了fmax为124.2GHz的结果.
Using base and emitter self-alignment and air-bridge techniques, the base resistance of SiGe HBTs and the junction capacitance between the collector and base are reduced and the maximum oscillation frequency of SiGe HBTs is increased fmax. Based on the molecular beam epitaxial SiGe material, a SiGe heterojunction transistor device was developed and the result of fmax of 124.2GHz was obtained.