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采用离子注入方法制备β- Fe Si2 薄膜 ,选择 C作为掺杂元素 ,得到了β- Fe Si2 硅化物层与基体间的界面平直、厚度均一的高质量薄膜 .经透射电镜分析可知 ,引入 C离子后硅化物层的微结构向有利于薄膜质量的方向发展 ,晶粒得到细化 ,β- Fe Si2 层稳定性提高 .从微结构角度考虑 ,引入 C离子对于提高β- Fe Si2 薄膜的质量是很有益处的 .进一步进行光学吸收表征 ,发现 C离子的引入对 β- Fe Si2 层的 Egd值没有产生不良影响 .讨论了 Egd值的影响因素 ,如制备方法、工艺参数、基体取向、掺杂离子种类、掺杂离子数量、退火温度等等 ,解释了文献报道的不同 Egd 值
The β-FeSi2 thin films were prepared by ion implantation, and C was selected as the doping element to obtain a high-quality thin film with uniform and uniform thickness at the interface between the β-FeSi2 silicide layer and the substrate. The microstructure of the ion-silicide layer favors the quality of the thin film, the grains are refined, and the stability of the β-Fe Si2 layer is improved. From the microstructure point of view, the introduction of C ions can improve the quality of the β-FeSi2 thin film Is further beneficial to the optical absorption characterization.It is found that the introduction of C ions has no adverse effect on the Egd value of β-Fe Si2 layer.The influencing factors of Egd value, such as the preparation method, process parameters, matrix orientation, Different types of ions, the number of doping ions, the annealing temperature and so on, explains the different Egd reported in the literature