Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal an explanation of our TEM

• 作 者: ZhangChonghong S.E.Donnelly J.
• 机 构: 不详,JoulePhysicsLaboratory,27Clevelauds
• 出 处: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 发表日期: 2002年1期
• 关键词: 碳化硅晶体 氦离子辐照 缺陷模型 透射电镜 X射线衍射研究 离子物理

【正】 In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of helium-implanted 4H-SiC.1. Sharp b