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在1400℃,用Ti,Si,C,Al,NaCl原料,氩气保护下无压烧结合成出纯净的、层状的Ti3SiC2陶瓷。用X射线衍射、扫描电子显微镜,透射电子显微镜对Ti3SiC2陶瓷的物相、表面形貌、微观结构进行表征。对合成出的Ti3SiC2陶瓷的微观形貌进行观察,发现Ti3SiC2晶体中有规整的六方形状的层状晶体,提出了Ti3SiC2晶体的自由生长的机理。Ti3SiC2晶体的生长机理由二维成核理论控制,台阶状晶体生长的形貌表明(002)晶面的生长要经过两个独立的过程。添加NaCl,有助于生成高纯度的层状Ti3SiC2陶瓷。
At 1400 ℃, with Ti, Si, C, Al, NaCl raw materials, under the protection of argon pressureless sintering to form a pure, layered Ti3SiC2 ceramics. The phase, surface morphology and microstructure of Ti3SiC2 ceramic were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The microstructure of the synthesized Ti3SiC2 ceramics was observed and it was found that there was a regular hexagonal layered crystal in the Ti3SiC2 crystal. The mechanism of free growth of the Ti3SiC2 crystal was proposed. The growth mechanism of Ti3SiC2 crystal is controlled by two-dimensional nucleation theory. The morphology of the stepped crystal growth shows that the growth of (002) crystal plane goes through two independent processes. Adding NaCl helps to produce high-purity layered Ti3SiC2 ceramics.