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对p-GaN/Ni/Au欧姆接触特性与Ni金属层厚度之间的相关性进行了对比实验研究,利用XRD衍射结果与表面金相显微分析手段对Ni/Au双层金属电极在合金退火过程中的行为特性进行了细致探讨。分析结果表明:在Ni/Au电极结构中,由双层互扩散机制与NiO氧化反应机理决定,Ni层与Au层之间的厚度比率对p型GaN欧姆接触特性的优劣有重要影响,在Ni、Au层厚度相当时可获得最佳的p型欧姆接触。
The correlation between the p-GaN / Ni / Au ohmic contact and the Ni metal layer thickness has been studied comparatively. The XRD and SEM were used to characterize the Ni / Au double-layer metal electrode during the annealing process Behavioral characteristics of a detailed discussion. The results show that the thickness ratio of Ni layer to Au layer has an important influence on the ohmic contact characteristics of p-type GaN in the Ni / Au electrode structure, which is determined by the mechanism of double-layer interdiffusion and oxidation mechanism of NiO. The best p-type ohmic contact is obtained when the thickness of Ni and Au layers is equal.