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The low internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application.The main reasons for low IQE include low carrier concentration,poor carrier location and large defects.The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells.In this paper,we propose a gradual Al-composition p-type A1GaN (p-AlGaN) conduction layer to improve the light emitting properties of A1GaN-based DUV-LED.Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED.Consequently,the IQE of our optimazited DUV-LED is increased by 162％ in comparison with conventional DUV-LEDs.