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The (Bi0.9Ho0.1)3.999Ti2.997V0.003O12 (BHTV) films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3+/V5+ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm (at applied field of 420 kV/cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.
The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show (BHTV) films have been prepared on Pt / Ti / SiO2 / Si substrates by solgel method. The single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3 + / V5 + cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6 ° C / cm2, 2Ec of 265 kV / cm of 420 kV / cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.