论文部分内容阅读
Bilayer superconducting films with tunable transition temperature (Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors.Commonly chosen materials include Mo/Au,Mo/Cu,Ti/Au,and Ti/A1 systems.Here in this work,titanium/indium (Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si (001)substrates by molecular beam epitaxy (MBE).The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150 ℃ during indium evaporation.We measure the critical temperature under a bias current of 10 μA,and obtain different superconducting transition temperatures ranging from 645 mK to 2.7 K by adjusting the thickness ratio of Ti/In.Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.