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本文提出了一种通过电学瞬态温度响应测量检测半导体器件芯片级温度均匀性的方法。实验证明器件的芯片级热不均匀性与加热响应曲线第一级台阶的高度呈现单调关系。在基于有限元方法的三维瞬态温度模拟及基于电学温敏参数法的测量结果中均可观测到这一现象。我们同样利用红外热成像法测量了器件在不同电流分布下的温度分布情况,利用热谱法定量分析了对应的芯片级温度不均匀性,其结果与本文所提出的方法的分析结果相吻合。
This paper presents a method of measuring temperature uniformity at the semiconductor device chip level by means of electrical transient temperature response measurement. Experiments show that the device chip-level thermal inhomogeneity and the response curve of the first step height monotonous relationship. This phenomenon can be observed in the three-dimensional transient temperature simulation based on the finite element method and the measurement result based on the electrical temperature-sensitive parameter method. We also use the infrared thermal imaging method to measure the temperature distribution of the device under different current distributions, and use the thermo-spectral method to quantitatively analyze the corresponding chip-level temperature inhomogeneity. The results are in good agreement with the analysis results of the proposed method.