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分别采用二氯苯氧乙酸和溴乙酸对ITO表面进行修饰,研究其对OLED器件(ITO/PVK/FIrPic∶SimCP/TPBi/LiF/Al)性能的影响。结果显示,相较于未修饰的器件,采用二氯苯氧乙酸修饰后的器件最大亮度由673.4cd/m2提升至1 875.2cd/m2,同时器件的启亮电压由6.2V降至5.3V。研究发现,有机酸处理能够改变ITO的表面能和功函数,一方面改变ITO和后续膜层的接触性能,影响后续膜层的成膜;另一方面也可以有效减少ITO与有机层间的势垒,提升载流子注入。这种用有机酸修饰ITO阳极的方法工艺简单,能有效降低空穴注入势垒,优化ITO和有机层的接触性能,对器件性能的提升起到一定的促进作用。
The surface of ITO was modified by dichlorophenoxyacetic acid and bromoacetic acid respectively to study its effect on the properties of ITO / PVK / FIrPic: SimCP / TPBi / LiF / Al. The results show that compared with the unmodified device, the maximum brightness of the device modified with dichlorophenoxyacetate is increased from 673.4cd / m2 to 1875.2cd / m2, and the turn-on voltage of the device is reduced from 6.2V to 5.3V. The results show that organic acid treatment can change the surface energy and work function of ITO. On the one hand, the contact properties of ITO and subsequent films are changed, which will affect the film formation of subsequent films. On the other hand, the potential between ITO and organic layers Base, enhance carrier injection. The method of using the organic acid to modify the ITO anode is simple and can effectively reduce the potential barrier of hole injection and optimize the contact performance between the ITO and the organic layer and promote the performance of the device.