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采用光辅助金属有机化学气相沉积(MOCVD)技术在(0001)蓝宝石衬底上制备了ZnO薄膜。通过X射线衍射、透射光谱和霍尔测试等研究了光照对MOCVD法制备的ZnO薄膜的影响。实验结果表明,引入光辅助后制备的ZnO薄膜,其结晶质量和光学质量均得到改善。分析认为,这主要是由于光辅助有助于提高锌有机源的分解效率,并且高能量的光子可为反应吸附的原子提供足够高的激活能,从而易于其迁移到合适的晶格位置所致。同时我们还发现,有光照和无光照条件下制备的ZnO薄膜均呈n型导电,但有光照条件下制备的ZnO薄膜具有更低的本底载流子浓度,这将为日后通过降低自补偿实现p型掺杂提供一个很好的解决办法。
ZnO thin films were prepared on (0001) sapphire substrates by photo assisted metalorganic chemical vapor deposition (MOCVD). The effects of light on the ZnO films prepared by MOCVD were studied by X-ray diffraction, transmission spectroscopy and Hall test. The experimental results show that the introduction of optical-assisted preparation of ZnO thin films, the crystal quality and optical quality are improved. It is believed that this is mainly due to the fact that photoassisted helps to improve the decomposition efficiency of the zinc organic source, and high-energy photons can provide sufficiently high activation energy for the atoms of the reaction to adsorb and thus easily migrate to the appropriate lattice sites . At the same time, we also found that the ZnO films prepared under light and no light show n-type conductivity, but the ZnO films prepared under the light conditions have a lower background carrier concentration, which will be reduced by self-compensation To achieve p-type doping provides a good solution.