Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silic

• 作 者: NaiMan Liao (1) Wei Li (1)
• 机 构: 1.StateKeyLaboratoryofElectronicThinFilmsandIntegratedDevices,2.SchoolofOptoelectronicInformation
• 出 处: 中国科学：技术科学英文版
• 发表日期: 2009年8期
• 关键词: electron irradiation hydrogenated AMORPHOUS silicon RAMAN SPECTRA depth profile
• 基金项目: Supported by the National Outstanding Young Scientists Foundation of China (Grant No. 60425101),the Science Foundation of General Armament Department of China (Grant No. 06DZ02)

According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in t