Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

• 作 者: 周其盛 曹俊诚 齐鸣 雷啸霖
• 机 构: State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and I
• 出 处: 半导体学报
• 发表日期: 2010年09期
• 关键词: phonon longitudinal Landau attributed monotonic transverse oscillation magneto s

We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes,using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1/τ_s is attributed to the enhancement of electron-phonon scattering with rising temperature.The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature,is produced,in agreement with recent experimental findings.

We examine the temperature dependence of acoustic-phonon-induced magnetoresistance oscillations in a high-mobility GaAs-based quantum well with conventional transverse and longitudinal phonon modes, using a model in which the temperature increase of the Landau level broadening or the single-particle scattering rate 1 / τ_s is attributed to the enhancement of electron-phonon scattering with rising temperature. The non-monotonic temperature behavior, showing an optimal temperature at which a given order of oscillation amplitude exhibits a maximum and the shift of the main resistance peak to higher magnetic field with rising temperature, is produced, in agreement with recent experimental findings.