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[导读]美国麻省理工学院和哈佛大学的研究人员发现,单层二硫化钼半导体在光激发下导电能力下降。利用这一新的光电导机制有望研制下一代激子设备。科技日报华盛顿11月15日电(记者何屹)美国麻省理工学院和哈佛大学的研究人员发现,单层二硫化钼半导体在光激发下导电能力下降。利用这一新的光电导
[REVIEW] Researchers at the Massachusetts Institute of Technology and Harvard University found that single-layer molybdenum disulfide semiconductors have decreased conductivity under photoexcitation. The use of this new photoconductive mechanism is expected to develop the next generation of exciton devices. Science and Technology Daily Washington, November 15 (Reporter He Yi) Massachusetts Institute of Technology and Harvard University researchers found that single-layer molybdenum disulfide semiconductor conductivity decreased under photoexcitation. Use this new photoconductor