论文部分内容阅读
The Indium Tin Oxide films have been prepared at different substrate-temperature on glass substrates by reactive evapora- tion of In-Sn alloy with an oxygen pressure of 1.3 ×10-1 Pa and a deposition rate of 10-2 nm/s. The best ITO films obtained have an electrical resistivity of 4.35 × 10-4 ??cm , a carrier concentration of 4.02 × 1020 cm-3 , and a Hall mobility of 67.5 cm2v-1s-1. The influence of the substrate-temperature on the structural , optical and electrical properties of the obtained films has been investigated.
The Indium Tin Oxide films have been prepared at different substrate-temperature on glass substrates by reactive evapora- tion of In-Sn alloy with an oxygen pressure of 1.3 × 10-1 Pa and a deposition rate of 10-2 nm / s. best ITO films obtained have an electrical resistivity of 4.35 × 10 -4 cm, a carrier concentration of 4.02 × 10 20 cm -3, and a Hall mobility of 67.5 cm 2-1 s -1. The influence of the substrate-temperature on the structural, optical and electrical properties of the obtained films has been investigated.