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采用高频溅射的方法制备了高亮度的ＺｎＳ∶Ｔｂ薄膜电致发光器件．测量了发射强度比Ｉ（５Ｄ３－７Ｆ６）／Ｉ（５Ｄ４－７Ｆ４）随激发电压的变化关系、弛豫时间及发光的量子效率，计算了碰撞截面，分析ＺｎＳ∶Ｔｂ的过热电子的分布，并与ＺｎＳ∶Ｍｎ进行了比较．指出了ＺｎＳ∶Ｔｂ效率与ＺｎＳ∶Ｍｎ效率差异的可能原因．
A high brightness ZnS: Tb thin film electroluminescent device was fabricated by high-frequency sputtering. The relationship between the emission intensity ratio I (5D3-7F6) / I (5D4-7F4) and the excitation voltage, the relaxation time and the quantum efficiency of the emission were measured. The collision cross section was calculated and the distribution of superheated electrons in ZnS: Tb was analyzed. Compared with ZnS: Mn. The possible reasons for the difference in ZnS: Tb efficiency and ZnS: Mn efficiency are pointed out.