Indium bump array fabrication on small CMOS circuit for flip-chip bonding

• 作 者: 黄寓洋 张宇翔 殷志珍 崔国新 刘惠春 边历峰 杨辉 张耀辉
• 机 构: Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Institute for Microstruct
• 出 处: 半导体学报
• 发表日期: 2011年11期
• 关键词: fabrication indium holder bonding modulator subsequent wafer AlGaAs beads remove

We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/AlGaAs multiple quantum well spatial light modulator.A chip holder with a via hole is used to coat the photoresist for indium bump lift-off.The 1000μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500μm,which ensures the integrity of the indium bump array.64×64 indium arrays with 20μm-high,30μm-diameter bumps are successfully formed on a 5×6.5 mm~2 CMOS chip.

We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs / AlGaAs multiple quantum well spatial light modulator. A chip holder with a via hole is used to coat the photoresist for indium bump lift-off. The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500 μm, which ensures the integrity of the indium bump array. 64 × 64 indium arrays with 20 μm-high, 30 μm-diameter bumps are successfully formed on a 5 × 6.5 mm ~ 2 CMOS chip.