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Narrow band mid-infrared (MIR) absorption is highly desired in thermal emitter and sensing applications.We theo-retically demonstrate that the perfect absorption at infrared frequencies can be achieved and controlled around the surface phonon resonance frequency of silicon carbide (SiC).The photonic heterostructure is composed of a distributed Bragg reflector (DBR)/germanium (Ge) cavity/SiC on top of a Ge substrate.Full-wave simulation results illustrate that the Tamm phonon-polaritons electric field can locally concentrate between the Ge cavity and the SiC film,contributed to the improved light-phonon interactions with an enhancement of light absorption.The structure has planar geometry and does not require nano-patteming to achieve perfect absorption of both polarizations of the incident light in a wide range of incident angles.Their absorption lines are tunable via engineering of the photon band-structure of the dielectric photonic nanostructures to achieve reversal of the geometrical phase across the interface with the plasmonic absorber.