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By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observedand analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)siliconmonocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of threestages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analysesthe silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and adislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.
By means of scanning electron microscope (SEM) and high voltage electron microscope (HVEM) we have observed and analyzed morphology and micro-structure of silicon oxide film with different thickness formed on (111) siliconmonocrystal under dry oxygen atmosphere at 1100 ℃ .Compared with their oxidation kinetic curves consisted of threestages, we suggested a mechanism on forming silicon oxide film. According to electron and X-ray diffraction analysis of semiconductor oxide film. We also have discussed a stacking fault and adislocation formed in the Si -Sio_2 interface region simulaneously forming silicon oxide film.