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研究了三种不同稀释倍数的弱碱性铜粗抛液,原液采用商用FA/O型铜抛光液,稀释倍数分别为1倍、3倍和5倍。基于化学机械抛光(CMP)作用机理,在相同工艺条件下分析了三种粗抛液对铜膜的平均去除速率、片内非均匀性(WIWNU)和平坦化性能等指标的影响。铜膜的抛光实验结果表明:稀释3倍的弱碱性铜粗抛液对铜膜平均去除速率高达869.76 nm/min,片内非均匀性仅为2.32%。四层图形片的平坦化测试结果显示,图形片初始高低差为312.5 nm,采用稀释3倍的粗抛液抛光20 s后,有效消除高低差261.5 nm,基本实现了全局平坦化,满足45 nm技术节点的要求。
Three kinds of dilute alkaline copper slush liquor with different dilution times were studied. The stock solutions were commercial FA / O copper slurries diluted 1, 3, and 5 times respectively. Based on the mechanism of chemical mechanical polishing (CMP), the effects of three kinds of rough slurry on the average copper removal rate, on-chip non-uniformity (WIWNU) and planarization performance were analyzed under the same process conditions. The experimental results of copper film polishing showed that the average copper removal rate was up to 869.76 nm / min and the on-chip inhomogeneity was only 2.32%. The flattening test results of the four-layer graphics tablet showed that the initial height difference of the graphics tablet was 312.5 nm. After polishing with a 3-fold dilution of the polishing liquid for 20 s, the height difference was effectively 261.5 nm, and global planarization was basically achieved, satisfying 45 nm Technical node requirements.