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采用高温气相法生长SnO2纳米线,扫描电子显微镜和X射线衍射仪分析表明所生长的SnO2纳米线大小均匀,直径约为150 nm,长可达10μm。结合丝网印刷法转移SnO2,制备成阴极阵列。封接阴极板与荧光屏成后栅型场致发射显示(FED)器件,测试其场致发射性能,分析讨论栅极电压和阳极电压对场发射性能的影响。实验表明后栅型SnO2-FED具有良好的栅极调控作用,在1600 V阳极电压和200 V栅极电压下工作实现全屏发光,平均发光亮度为560 cd/m2,具有潜在的应用前景。
The growth of SnO2 nanowires by high temperature gas phase method, scanning electron microscopy and X-ray diffraction analysis showed that the size of the grown SnO2 nanowires was about 150 nm in diameter and 10 μm in length. Combined with screen printing transfer SnO2, prepared into a cathode array. The cathode plate and the phosphor screen were bonded to a back gate type field emission display (FED) device to test the field emission performance. The influence of the gate voltage and the anode voltage on the field emission performance was analyzed and discussed. Experiments show that the gate-type SnO2-FED has a good gate regulation function. It can emit full-screen light at an anode voltage of 1600 V and a gate voltage of 200 V with an average luminance of 560 cd / m2, which has potential applications.