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对多晶硅薄膜晶体管器件工艺中的反应性离子刻蚀技术进行研究 ,给出了Ta、p Si等多晶硅薄膜晶体管器件中常见薄膜的刻蚀速率 ,通过工艺参数的优化 ,使薄膜间的选择比在 2～ 2 0可选择 ;并通过气体掺杂 ,实现了SiNx 对 p Si的选择比从 - 1到 2的反转
The reactive ion etching technique in polycrystalline silicon thin film transistor device is studied. The etching rates of common thin films in polycrystalline silicon thin film transistor devices such as Ta, p Si etc are given. By optimizing the process parameters, 2 ~ 20 can be selected; and by gas doping, to achieve SiNx p Si selectivity than - 1 to 2 reverse