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在薄膜混合集成电路中,对薄膜电阻提出了愈来愈高的要求。例如目前作为数—模转换器中的精密电阻网络已要求电阻相对误差在使用温度范围内达到0.1%～0.01%的精度,即电阻的温度系数要在±10ppm/℃以内。近几年来,国外在这一方面做了不少工作,D.Boswell[1]报导了用Ni—Cr薄膜电阻作为21位10kΩ/20kΩ梯形网络,其稳定性达20年之久,精度<0.25%,温度系数<+20ppm/℃。金亲良一[2]以Ni—Cr为基质,加入少量Al、Be、Si和Sn等杂质,制成了温度系数在10ppm/℃以内、性能非常稳定的薄膜电阻。其它还有一些文献[3]、[4]
In thin-film hybrid integrated circuits, higher and higher demands are placed on thin-film resistors. For example, the precision resistor network currently used in digital-to-analog converters has required that the relative error of the resistance be within the range of 0.1% to 0.01% within the operating temperature range, that is, the temperature coefficient of the resistor should be within ± 10 ppm / ° C. In recent years, many foreign countries have done a lot of work in this area. D.Boswell [1] reported that the use of Ni-Cr thin film resistor as a 21-bit 10kΩ / 20kΩ ladder network has a stability of 20 years and an accuracy of <0.25 %, Temperature coefficient <+ 20ppm / ℃. Jin Qin Liang [2] to Ni-Cr as a matrix, adding a small amount of Al, Be, Si and Sn and other impurities, made of the temperature coefficient of 10ppm / ℃ or less, the performance is very stable sheet resistance. There are some other literature [3], [4]