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针对目前大多数氧化物薄膜晶体管都需要采用热退火工艺来提高其性能不利于其在柔性显示器件中应用这一问题,提出了一种采用室温工艺制备的新型TFT器件,无需退火处理即可获得较好的器件性能。该器件采用脉冲激光沉积技术制备的AZO/Al_2O_3叠层结构作为沟道层。与单层AZO-TFT器件相比,叠层TFT器件具有更优异的性能,其迁移率为2.27 cm2·V-1·s-1,开关比为1.43×106。通过对AZO/Al_2O_3叠层薄膜的厚度、密度、粗糙度、物相、界面特性及能带结构等进行分析,发现这种叠层结构能够使电子的运动被限制在AZO薄膜平面内,即形成了二维电子传输,从而提升TFT器件的性能。
In view of the fact that most oxide thin film transistors need to use a thermal annealing process to improve their performance, which is unfavorable to the application in flexible display devices, a novel TFT device prepared by a room temperature process is proposed and can be obtained without an annealing treatment Better device performance. The device uses a pulsed laser deposition technology AZO / Al_2O_3 stack structure as the channel layer. Compared with the single-layer AZO-TFT device, the multilayer TFT device has more excellent performance with a mobility of 2.27 cm2 · V-1 · s-1 and a switching ratio of 1.43 × 106. Through the analysis of the thickness, density, roughness, phase, interface characteristics and band structure of the AZO / Al 2 O 3 laminated thin films, it is found that this kind of laminated structure can make the movement of electrons be confined in the AZO film plane, Two-dimensional electronic transmission, thereby enhancing the performance of TFT devices.