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以Zn-Al(Al:2wt.%)合金为溅射靶材,采用直流反应磁控溅射的方法,在普通玻璃衬底上制备Al掺杂ZnO(AZO)薄膜。通过对衬底温度的调制,在较高衬底温度下(～280℃),无需经过常规溅射后腐蚀工艺过程,即可获得表面形貌具有特征陷光结构的AZO薄膜,其表面呈现“类金字塔”状,粗糙度RMS=65.831nm。通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了衬底温度对AZO薄膜性能的影响。X射线衍射(XRD)和扫描电子显微镜(SEM)测试表明,所有样品均为多晶六角纤锌矿结构,薄膜呈(002)晶面择优生长,其表面形貌随衬底温度的不同而改变。衬底温度为200℃及其以上工艺条件下获得的AZO薄膜,在可见光及近红外范围的平均透过率大于90%,电阻率优于1.5×10-3Ωcm。
Al-doped ZnO (AZO) thin films were prepared on common glass substrate by DC reactive magnetron sputtering with Zn-Al (Al: 2wt.%) As sputtering target. By modulating the temperature of the substrate, the AZO film with the characteristic trapping structure can be obtained at higher substrate temperature (~ 280 ℃) without the need of etching after conventional sputtering. The surface of the AZO film shows a “Pyramid like” shape, roughness RMS = 65.831nm. The influence of substrate temperature on the properties of AZO thin films has been studied in detail by testing the structure, surface morphology and optical properties of the films. X-ray diffraction (XRD) and scanning electron microscopy (SEM) tests showed that all the samples were polycrystalline hexagonal wurtzite structure. The films were preferentially grown on the (002) plane and their surface morphology changed with the substrate temperature . AZO films obtained at substrate temperature of 200 ℃ and above have an average transmittance of more than 90% in the visible and near infrared range and a resistivity of better than 1.5 × 10 -3 Ωcm.