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提出一种精确的体接触RF-SOI(radio frequency silicon-on-insulator)LDMOSFET(lateral double diffusedMOSFET)大信号等效电路模型.模型漏电流及偏置相关电容模型方程连续、任意阶次可导.发展出一种新的可满足电荷守恒栅源、栅漏电容模型.对漂移区电阻以及LDD(lightly doped drain)区下侧寄生效应偏置相关特性进行了考虑.对自热效应引起的热功率耗散以及跨导/漏导频率分布效应也作了考虑.模型最终应用到一20栅指(每指尺寸为长L=1μm,宽W=50μm)体接触高阻SOI RF-LDMOSFET建模中.测量和仿真所得I-V,S参数,谐波功率特性对比结果验证了模型具有良好的精度.
An accurate large-signal equivalent circuit model of RF-SOI (lateral double diffused MOSFET) is proposed.The model leakage current and bias-related capacitance model equations are continuous and can be guided by any order. A new charge-discharge gate-source and gate-drain capacitance model is developed, which takes into account the drift region resistance and the parasitic bias under the lightly doped drain (LDD) region. The thermal power consumption caused by self- And the effects of transconductance / leakage conductance distribution are also taken into consideration.The model is finally applied to a 20-gate finger (each length L = 1μm, W = 50μm) body-contact high resistance SOI RF-LDMOSFET modeling. Measured and simulated IV, S parameters, harmonic power characteristics of the comparison results verify the model with good accuracy.