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在不同衬底温度(室温~750℃)条件下,采用脉冲激光沉积(PLD)方法在石英玻璃和单晶硅(111)衬底上制备了Ga掺杂ZnO(GZO)薄膜.结果显示:衬底温度的变化导致衬底表面吸附原子扩散速率和脱附速率的不同,从而导致合成薄膜结晶质量的差异,衬底温度450℃时制备的GZO薄膜具有最好的结晶特性;GZO薄膜中载流子浓度随衬底温度升高而单调减小的现象与GZO薄膜中的本征缺陷密切相关,晶界散射强度的变化导致迁移率出现先增大后减小的趋势,衬底温度450℃时制备的GZO薄膜具有最小的电阻率~0.02Ω.cm;随着衬底温度的升高,薄膜载流子浓度的单调减小导致了薄膜光学带隙变窄,所有合成样品的平均可见光透过率均达到85%以上.采用PLD方法制备GZO薄膜,衬底温度的改变可以对薄膜的光电性能起到调制作用.“,”Gadoped ZnO(GZO) thin films were grown on single crystal silicon(111) and quartz glass substrates by pulsed laser deposition(PLD) method at different substrate temperatures from room temperature to 750 ℃.The change of substrate temperature leads to different diffusion and desorption rates for adsorption atoms resting on substrate surface,and results in different crystalline quality for GZO thin films.The GZO thin film grown at 450 ℃ has the best crystalline quality.The carrier concentration monotonically decreases with the increase of substrate temperature,which is related to the intrinsic defects in films.The Hall mobility first increases and then decreases with the substrate temperature increasing,it results from the variation of grain boundary scattering.And the lowest resistivity ~0.02 Ω·cm is obtained in the film prepared at 450 ℃.With the increase of substrate temperature,the optical band gap becomes narrow due to the monotonic increase of carrier concentration.The average transmittance in visible region is above 85% for all the GZO samples.Our results exhibit that the optical and electrical properties of GZO thin films prepared by PLD method can be adjusted by the change of substrate temperature.