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采用磁控溅射的方法在Si衬底上生长Fe/Si多层膜,退火后形成了硅化物薄膜。利用X射线衍射(XRD)、Raman光谱、原子力显微镜(AFM)研究了Fe/Si膜厚比和退火温度对薄膜结构特性的影响。研究表明,当Fe/Si膜厚比为1/2,预先在衬底上沉积Fe缓冲层,退火温度为750℃,形成的硅化物为β-FeSi2,晶粒的平均尺寸大约为50nm,且分布得比较均匀。如果Fe/Si厚度比为1/1或3/10时,形成的硅化物为ε-FeSi。随着退火温度的升高,Fe/Si之间的相互扩散逐渐增强,当退火温度为1 000℃时,形成了富硅的二硅化物的高温相α-FeSi2。
The magnetron sputtering method was used to grow Fe / Si multilayers on Si substrates and annealed to form silicide films. The effects of Fe / Si film thickness ratio and annealing temperature on the structural characteristics of the films were investigated by X-ray diffraction (XRD), Raman spectroscopy and atomic force microscopy (AFM). The results show that when the Fe / Si film thickness ratio is 1/2, an Fe buffer layer is deposited on the substrate in advance, the annealing temperature is 750 ℃, the silicide formed is β-FeSi2, the average size of the crystal grains is about 50 nm, and Distributed more evenly. If the Fe / Si thickness ratio is 1/1 or 3/10, the silicide formed is ε-FeSi. As the annealing temperature increases, the mutual diffusion between Fe / Si increases gradually. When the annealing temperature is 1 000 ℃, the high temperature phase α-FeSi2 of silicon-rich disilicide is formed.