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用CEMS方法对掺锑的SnO_2气敏薄膜作了研究。该材料对H_2、CO的气敏响应取决于掺锑浓度(x％)和退火温度。实验发现:样品的CEMS参量同质异能移和四极分裂分布宽度在x=1％时为最小值,正好与气敏响应灵敏度达最大值相一致。由此进一步讨论了气敏薄膜的敏感机理。
The CEMS method was used to study the antimony-doped SnO_2 gas-sensing films. The material’s gas sensing response to H 2 and CO depends on the concentration of antimony (x%) and the annealing temperature. The experimental results show that the distribution width of CEMS isomorphism and quadrupole distribution are the minimum values at x = 1%, which coincides with the maximum sensitivity of gas sensitivities. This further discusses the sensitive mechanism of gas-sensitive films.