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采用中频磁控反应溅射工艺进行了氮化铝薄膜的制备,对沉积速率、晶体结构和表面形貌与氮气流量和溅射功率之间的变化关系进行了研究。结果表明,通过调节N2流量和溅射功率选择性地获得非晶态和沿着c轴方向择优生长的晶态AlN薄膜。在化合物沉积模式下,增加溅射功率和增加反应气体流量均有利于获得非晶态AlN薄膜,并且减小薄膜表面粗糙度,获得光滑的AlN薄膜,并采用薄膜生长原理对这种现象进行了解释。
The preparation of aluminum nitride thin films by MF magnetron reactive sputtering was carried out. The relationship between deposition rate, crystal structure, surface morphology and nitrogen flow rate and sputtering power was studied. The results show that crystalline AlN films that are preferentially grown both in the amorphous state and in the c-axis direction are selectively obtained by adjusting the N2 flow rate and sputtering power. In the compound deposition mode, increasing the sputtering power and increasing the reactive gas flow are conducive to obtaining the amorphous AlN film, and reducing the film surface roughness to obtain a smooth AlN film, and using the principle of film growth of this phenomenon Explanation.